Patent · US Active

Plasma dicing apparatus and method of manufacturing semiconductor chips

US7994026B2 · kind B2 · utility

19Cited by
1References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 12, 2008
Grant dateAug 9, 2011
Priority date
Expiry dateApr 10, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/78
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.