Silicon carbide semiconductor device including deep layer
US7994513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
Abstract
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.