Image sensor and method of fabricating the same
US7994551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2007 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | May 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.