Structure and method for forming power devices with carbon-containing region
US7994573B2 · kind B2 · utility
99Cited by
9References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Dec 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. The body regions form p-n junctions with the semiconductor region. Source regions of the second conductivity type extend over the body regions. The source regions form p-n junctions with the body regions. Gate electrodes extend adjacent to but are insulated from the body regions by a gate dielectric. A carbon-containing region extends in the semiconductor region below the body regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.