Inventor · Fishkill, NY, US

James Pan

78Patents
19h-index
47Co-inventors
80Inventor score

Filing activity: Aug 20, 1997 → Apr 30, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US7078299B2 Formation of finFET using a sidewall epitaxial layer Emerging Cross-Sectional Technologies 103 Expired
US7994573B2 Structure and method for forming power devices with carbon-containing region Electricity 99 Active
US6955969B2 Method of growing as a channel region to reduce source/drain junction capacitance Electricity 88 Expired
US6855982B1 Self aligned double gate transistor having a strained channel region and process therefor Electricity 76 Expired
US7138302B2 Method of fabricating an integrated circuit channel region Electricity 68 Expired
US6830998B1 Gate dielectric quality for replacement metal gate transistors Electricity 62 Expired
US6929992B1 Strained silicon MOSFETs having NMOS gates with work functions for compensating NMOS threshold voltage shift Electricity 39 Expired
US7091118B1 Replacement metal gate transistor with metal-rich silicon layer and method for making the same Electricity 36 Expired
US6727560B1 Engineered metal gate electrode Electricity 32 Expired
US7772668B2 Shielded gate trench FET with multiple channels Electricity 30 Active
US7202123B1 Mesa isolation technology for extremely thin silicon-on-insulator semiconductor devices Electricity 28 Expired
US7033869B1 Strained silicon semiconductor on insulator MOSFET Electricity 27 Expired
US6943087B1 Semiconductor on insulator MOSFET having strained silicon channel Electricity 26 Expired
US6146967A Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG Emerging Cross-Sectional Technologies 24 Expired
US7071086B2 Method of forming a metal gate structure with tuning of work function by silicon incorporation Electricity 24 Expired
US6936516B1 Replacement gate strained silicon finFET process Electricity 23 Expired
US7936009B2 Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein Electricity 23 Active
US6864163B1 Fabrication of dual work-function metal gate structure for complementary field effect transistors Electricity 22 Expired
US7060571B1 Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric Electricity 21 Expired
US7033888B2 Engineered metal gate electrode Electricity 17 Expired
US6861350B1 Method of manufacturing semiconductor device comprising silicon-rich tasin metal gate electrode Electricity 17 Expired
US8329538B2 Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein Electricity 15 Active
US7015078B1 Silicon on insulator substrate having improved thermal conductivity and method of its formation Electricity 15 Expired
US7807576B2 Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices Electricity 13 Active
US7601574B2 Methods for fabricating a stress enhanced MOS transistor Electricity 12 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.