High voltage transistor with improved driving current
US7994580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2005 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jan 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.