Bipolar transistor fabricated in a biCMOS process
US7994611B1 · kind B1 · utility
0Cited by
6References
10Claims
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Key dates
| Filing date | Jul 14, 2004 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
According to one exemplary embodiment, a bipolar transistor includes a base having a top surface. The bipolar transistor further includes a base oxide layer situated on the top surface of the base. The bipolar transistor further includes an antireflective coating layer situated on the base oxide layer. The bipolar transistor further includes an emitter situated over the top surface of the base and the antireflective coating layer, where a layer of polysilicon is not situated between the base oxide layer and the emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.