Microelectronic structure including dual damascene structure and high contrast alignment mark
US7994639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Nov 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic structure, and in particular a semiconductor structure, includes a substrate and a dielectric layer located over the substrate. In addition at least one alignment mark is located interposed between the dielectric layer and the substrate. The at least one alignment mark comprises, or preferably consists essentially of, at least one substantially present element having an atomic number at least 5 greater than a highest atomic number substantially present element within materials surrounding the alignment mark Also included within the microelectronic structure is a dual damascene aperture located within the dielectric layer. The dual damascene aperture may be fabricated using, among other methods, a hybrid lithography method that uses direct write lithography and optical lithography, in conjunction with the at least one alignment mark and an electron beam as an alignment beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.