MRAM device with shared source line
US7995378B2 · kind B2 · utility
17Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2007 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Jun 19, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.