Memory array of pairs of nonvolatile memory cells using Fowler-Nordheim programming and erasing
US7995385B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0491
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system comprising a program component that programs one or more non-volatile memory (“NVM”) cells of an array of pairs of NVM cells using FN tunneling, an erase component that erases the one or more NVM cells of the array of pairs of NVM cells using FN tunneling, and a read component that reads the one or more NVM cells of the array of pairs of NVM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.