Data storage using modified voltages
US7995388B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell. A first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells with respective first pass voltages, is applied to the target memory cell. A second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells with respective second pass voltages, is applied to the target memory cell. At least one of the second pass voltages is different from a respective first pass voltage. The data is reconstructed responsively to the first and second output storage values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.