Patent assignee · IL · COMPANY

Anobit Technologies Ltd.

34Patents
34Active
34Granted
58Portfolio score

Filing activity: May 10, 2007 → May 24, 2011 · 34 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7593263B2 Memory device with reduced reading latency Physics 135 Active
US7975192B2 Reading memory cells using multiple thresholds Physics 124 Active
US7697326B2 Reducing programming error in memory devices Electricity 116 Active
US7466575B2 Memory device programming using combined shaping and linear spreading Physics 113 Active
US7706182B2 Adaptive programming of analog memory cells using statistical characteristics Physics 110 Active
US8169825B1 Reliable data storage in analog memory cells subjected to long retention periods Physics 65 Active
US8000135B1 Estimation of memory cell read thresholds by sampling inside programming level distribution intervals Physics 64 Active
US8156398B2 Parameter estimation based on error correction code parity check equations Electricity 57 Active
US7773413B2 Reliable data storage in analog memory cells in the presence of temperature variations Physics 54 Active
US8145984B2 Reading memory cells using multiple thresholds Physics 51 Active
US8156403B2 Combined distortion estimation and error correction coding for memory devices Physics 50 Active
US7925936B1 Memory device with non-uniform programming levels Physics 50 Active
US8000141B1 Compensation for voltage drifts in analog memory cells Physics 38 Active
US8050086B2 Distortion estimation and cancellation in memory devices Physics 33 Active
US7995388B1 Data storage using modified voltages Physics 30 Active
US8085586B2 Wear level estimation in analog memory cells Physics 29 Active
US7900102B2 High-speed programming of memory devices Physics 28 Active
US7924613B1 Data storage in analog memory cells with protection against programming interruption Physics 27 Active
US8060806B2 Estimation of non-linear distortion in memory devices Physics 25 Active
US7924587B2 Programming of analog memory cells using a single programming pulse per state transition Physics 22 Active
US7864573B2 Programming analog memory cells for reduced variance after retention Physics 19 Active
US8059457B2 Memory device with multiple-accuracy read commands Physics 19 Active
US8151163B2 Automatic defect management in memory devices Physics 18 Active
US7821826B2 Memory cell readout using successive approximation Physics 18 Active
US7751240B2 Memory device with negative thresholds Physics 17 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.