Structures and methods for reading out non-volatile memories
US7995398B2 · kind B2 · utility
3Cited by
2References
24Claims
0Family size
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Inventor
Key dates
| Filing date | Nov 6, 2009 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Non-differential sense amplifier circuitry for reading out Non-Volatile Memories (NVMs) and its operating methods are disclosed. Such non-differential amplifier circuitry requires exceptionally low power and achieves moderate sensing speed, as compared to a conventional sensing scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.