Inventor · Diamond Bar, CA, US

Lee Wang

50Patents
6h-index
10Co-inventors
69Inventor score

Filing activity: Jun 16, 1997 → Feb 14, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5824584A Method of making and accessing split gate memory device Emerging Cross-Sectional Technologies 65 Expired
US7099192B2 Nonvolatile flash memory and method of operating the same Physics 45 Expired
US7729165B2 Self-adaptive and self-calibrated multiple-level non-volatile memories Physics 15 Active
US8817546B2 Complementary electrical erasable programmable read only memory Physics 15 Active
US7733700B2 Method and structures for highly efficient hot carrier injection programming for non-volatile memories Physics 10 Active
US8716803B2 3-D single floating gate non-volatile memory device Electricity 8 Active
US9754668B1 Digital perceptron Physics 6 Active
US7400527B2 Bit symbol recognition method and structure for multiple bit storage in non-volatile memories Physics 5 Active
US9048137B2 Scalable gate logic non-volatile memory cells and arrays Electricity 5 Active
US7859903B1 Methods and structures for reading out non-volatile memory using NVM cells as a load element Physics 5 Active
US8415721B2 Field side sub-bitline nor flash array and method of fabricating the same Electricity 5 Active
US9779814B2 Non-volatile static random access memory devices and methods of operations Physics 4 Active
US10431308B1 Memory cell size reduction for scalable logic gate non-volatile memory arrays Electricity 3 Active
US9082490B2 Ultra-low power programming method for N-channel semiconductor non-volatile memory Physics 3 Active
US7515465B1 Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM) Physics 3 Active
US7626868B1 Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM) Physics 3 Active
US7995398B2 Structures and methods for reading out non-volatile memories Physics 3 Active
US9502113B2 Configurable non-volatile content addressable memory Physics 3 Active
US8274828B2 Structures and methods for reading out non-volatile memory using referencing cells Physics 2 Active
US8988104B2 Multiple-time configurable non-volatile look-up-table Electricity 2 Active
US9685239B1 Field sub-bitline nor flash array Electricity 2 Active
US8415735B2 Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same Electricity 2 Active
US7660154B2 Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM) Physics 2 Active
US7606069B2 Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memories Physics 2 Active
US9214465B2 Structures and operational methods of non-volatile dynamic random access memory devices Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.