Patent · US Active

Dual carbon nanotubes for critical dimension metrology on high aspect ratio semiconductor wafer patterns

US7997002B2 · kind B2 · utility

0Cited by
12References
14Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 1, 2007
Grant dateAug 16, 2011
Priority date—
Expiry dateJan 8, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01Q70/12
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A probe capable of measuring recesses in features such as apertures and/or trench-like structures of very small size is comprised of one or more carbon nanotubes (CNTs) which is oriented at an angle and, if two or more CNTs are employed, such that they cross (with or without touching each other) at a location separated from ends of the carbon nanotubes which approximates the depth of the aperture or trench-like structure and at an angle such that the ends of the carbon nanotubes extends by a lateral distance greater than a dimension of a recess of a feature to be measured or in excess of a sidewall angle or an angle of a crystal lattice of a material in which a feature to be measured is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.