Photomask and pattern formation method using the same
US7998641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Dec 6, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/29
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.