Processing liquid for resist substrate and method of processing resist substrate using the same
US7998664B2 · kind B2 · utility
3Cited by
4References
9Claims
0Family size
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Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Dec 29, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.