Nonvolatile memory device including nano dot and method of fabricating the same
US7998804B2 · kind B2 · utility
6Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Apr 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.