Wafer laser processing method and apparatus
US7998840B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 19, 2009 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | May 26, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A wafer laser processing method for forming deteriorated layers in the inside of a wafer having a device area and a peripheral excess area surrounding the device area, the surface of the device area being higher than the surface of the peripheral excess area, involving a first step for forming a deteriorated layer in the insides of the peripheral excess area and device area by applying a laser beam to the peripheral excess area and the device area with its focal point set in the material of the peripheral excess area and the device area from the front surface side of the wafer; and a second step for forming a deteriorated layer in the inside of the device area by applying a laser beam to the device area with its focal point set in the material of the device area without applying the laser beam to the peripheral excess area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.