SOI radio frequency switch with enhanced signal fidelity and electrical isolation

US7999320B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alan B. Botula · South Burlington, US
• Alvin J. Joseph · Williston, US
• Edward J. Nowak · South Burlington, US
• Yun Shi · South Burlington, US
• James A. Slinkman · Montpelier, US

Key dates

• Filing date: Dec 23, 2008
• Grant date: Aug 16, 2011
• Expiry date: Aug 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A doped contact region having an opposite conductivity type as a bottom semiconductor layer is provided underneath a buried insulator layer in a bottom semiconductor layer. At least one conductive via structure extends from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer and to the doped contact region. The doped contact region is biased at a voltage that is at or close to a peak voltage in the RF switch that removes minority charge carriers within the induced charge layer. The minority charge carriers are drained through the doped contact region and the at least one conductive via structure. Rapid discharge of mobile electrical charges in the induce charge layer reduces harmonic generation and signal distortion in the RF switch. A design structure for the semiconductor structure is also provided.