Inventor · South Burlington, VT, US

Alan B. Botula

56Patents
8h-index
41Co-inventors
74Inventor score

Filing activity: May 18, 2001 → Sep 30, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US8131225B2 BIAS voltage generation circuit for an SOI radio frequency switch Electricity 38 Active
US8674472B2 Low harmonic RF switch in SOI Electricity 25 Active
US8722508B2 Low harmonic RF switch in SOI Electricity 21 Active
US6429489B1 Electrostatic discharge power clamp circuit Electricity 20 Expired
US7999320B2 SOI radio frequency switch with enhanced signal fidelity and electrical isolation Electricity 19 Active
US8021943B2 Simultaneously formed isolation trench and through-box contact for silicon-on-insulator technology Electricity 19 Active
US6549061B2 Electrostatic discharge power clamp circuit Electricity 10 Expired
US8026131B2 SOI radio frequency switch for reducing high frequency harmonics Electricity 9 Active
US8089126B2 Method and structures for improving substrate loss and linearity in SOI substrates Electricity 8 Active
US8133774B2 SOI radio frequency switch with enhanced electrical isolation Electricity 7 Active
US9601606B2 Integrated circuit heat dissipation using nanostructures Electricity 6 Active
US9324628B2 Integrated circuit heat dissipation using nanostructures Electricity 6 Active
US8492868B2 Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer Electricity 5 Active
US8748285B2 Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate Electricity 4 Active
US10068827B2 Integrated circuit heat dissipation using nanostructures Electricity 4 Active
US9530711B2 Silicon-on-insulator heat sink Electricity 4 Active
US8963293B2 High resistivity silicon-on-insulator substrate and method of forming Electricity 4 Active
US7772083B2 Trench forming method and structure Electricity 4 Active
US10109553B2 Integrated circuit heat dissipation using nanostructures Electricity 3 Active
US8471340B2 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure Electricity 3 Active
US8518782B2 Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure Electricity 3 Active
US8741739B2 High resistivity silicon-on-insulator substrate and method of forming Electricity 3 Active
US8299547B2 Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates Physics 3 Active
US8735986B2 Forming structures on resistive substrates Electricity 3 Active
US8299561B2 Shielding for high-voltage semiconductor-on-insulator devices Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.