Patent · US Active

Optoelectronic device with germanium photodetector

US7999344B2 · kind B2 · utility

15Cited by

11References

14Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Solomon Assefa · Ossining, US
Stephen W. Bedell · Wappingers Falls, US
Yurii A. Vlasov · Katonah, US
Fengnian Xia · Plainsboro, US

Key dates

Filing date	May 6, 2010
Grant date	Aug 16, 2011
Priority date	—
Expiry date	May 6, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.