Hard disk system incorporating a current perpendicular to plane magneto-resistive effect device with a spacer layer in the thickness range showing conduction performance halfway between OHMIC conduction and semi-conductive conduction
US8000066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2007 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Mar 7, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3993
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohmic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value. If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.