Method for resetting a resistive change memory element
US8000127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations—for example, a programming pulse of a predetermined voltage level and pulse width—on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. If this initial value is above the second threshold value but below the first threshold value, a second set of programming parameters are used within the programming operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.