Field-emitter-based memory array with phase-change storage devices
US8000129B2 · kind B2 · utility
4Cited by
21References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Mar 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable electrical property of the devices, and/or three-dimensional memory arrays of the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.