Laser diode with high indium active layer and lattice matched cladding layer
US8000366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2008 |
| Grant date | Aug 16, 2011 |
| Priority date | — |
| Expiry date | Jul 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3216
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.