Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device
US8002892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2005 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02625
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.