Patent · US Active

Pixelated photoresists

US8003293B2 · kind B2 · utility

0Cited by
4References
45Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 30, 2004
Grant dateAug 23, 2011
Priority date
Expiry dateNov 22, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/115
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.