Stacked organic memory devices and methods of operating and fabricating
US8003436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2008 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jul 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/311
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.