Patent · US Active

Methods of manufacturing a semiconductor device with active regions of different heights

US8003458B2 · kind B2 · utility

3Cited by
17References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 23, 2010
Grant dateAug 23, 2011
Priority date—
Expiry dateFeb 23, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor having a second active area. A top surface of the first active area is elevated or recessed with respect to a top surface of the second active area, or a top surface of the first active area is elevated or recessed with respect to a top surface of at least portions of an isolation region proximate the first transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.