Patent · US Active

Formation of a super steep retrograde channel

US8003471B2 · kind B2 · utility

0Cited by
9References
15Claims
0Family size

Inventors

Key dates

Filing dateMar 1, 2010
Grant dateAug 23, 2011
Priority date—
Expiry dateMar 1, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/371
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments in accordance with one embodiment may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.