Semiconductor device and fabrication method

US8003502B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Hille · Munich, DE
• Holger Schulze · Villach, AT
• Manfred Pfaffenlehner · Birkenfeld, DE
• Carsten Schaeffer · Annenheim, AT
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE

Key dates

• Filing date: Apr 2, 2009
• Grant date: Aug 23, 2011
• Expiry date: May 29, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.