Patent · US Active

Method for revealing emergent dislocations in a germanium-base crystalline element

US8003550B2 · kind B2 · utility

0Cited by

2References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Loic Sanchez · Voiron, FR
Chrystel Deguet · Meylan, FR

Key dates

Filing date	Dec 18, 2009
Grant date	Aug 23, 2011
Priority date	—
Expiry date	Dec 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/24
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.