Ethane implantation with a dilution gas
US8003957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2009 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Nov 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, as they contain only non-carbon atoms. These species must be eliminated before the implantation, leaving only carbon-based species. However, the current of the desired species may be low, thereby requiring extra energy or time to implant the desired dosage of carbon into a substrate. This can be improved through the use of a second gas. This second gas is used to dilute the primary carbon-containing gas to be ionized in the ion chamber. By incorporating this dilution gas, more of the resulting ionized species are beneficial to the carbon implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.