Switching device, drive and manufacturing method for the same, integrated circuit device and memory device

US8003969B2 · kind B2 · utility

Assignee

• NEC CORPORATION · JP

Inventors

• Hisao Kawaura · Tokyo, JP
• Hiroshi Sunamura · Yokohama, JP

Key dates

• Filing date: Dec 22, 2005
• Grant date: Aug 23, 2011
• Expiry date: May 17, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8416

Abstract

Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.