Nitride semiconductor light emitting element
US8004006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2006 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Jan 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.