Static random access memory (SRAM) cell and method for forming same

US8004042B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Lie Yang · Baoshan, TW
• Feng-Ming Chang · Kaohsiung, TW
• Chang-Ta Yang · Baoshan, TW
• Ping-Wei Wang · Baoshan, TW

Key dates

• Filing date: Mar 20, 2009
• Grant date: Aug 23, 2011
• Expiry date: Mar 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

In accordance with an embodiment of the present invention, a static random access memory (SRAM) cell comprises a first pull-down transistor, a first pull-up transistor, a first pass-gate transistor, a second pull-down transistor, a second pull-up transistor, a second pass-gate transistor, a first linear intra-cell connection, and a second linear intra-cell connection. Active areas of the transistors are disposed in a substrate, and longitudinal axes of the active areas of the transistors are all parallel. The first linear intra-cell connection electrically couples the active area of the first pull-down transistor, the active area of the first pull-up transistor, and the active area of the first pass-gate transistor to a gate electrode of the second pull-down transistor and a gate electrode of the second pull-up transistor. The second linear intra-cell connection electrically couples the active area of the second pull-down transistor, the active area of the second pull-up transistor, and the active area of the second pass-gate transistor to a gate electrode of the first pull-down transistor and a gate electrode of the first pull-up transistor.