Patent · US Active

Magnetic tunnel junction device with separate read and write paths

US8004881B2 · kind B2 · utility

23Cited by

6References

10Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Xiaochun Zhu · San Diego, US
Shiqun Gu · San Diego, US
Xia Li · San Diego, US
Seung H. Kang · San Diego, US

Key dates

Filing date	Dec 19, 2007
Grant date	Aug 23, 2011
Priority date	—
Expiry date	Apr 9, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/935
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.