Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
US8005124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2009 |
| Grant date | Aug 23, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.