Patent · US Active

Atomic layer deposition (ALD) method and reactor for producing a high quality layer

US8007865B2 · kind B2 · utility

8Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 31, 2006
Grant dateAug 30, 2011
Priority date—
Expiry dateMay 14, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02274
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

One inventive aspect is related to an atomic layer deposition (ALD) method comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.