Photomask and pattern formation method using the same
US8007959B2 · kind B2 · utility
0Cited by
10References
24Claims
0Family size
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Key dates
| Filing date | Jul 29, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Mar 20, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.