CMOS device with raised source and drain regions

US8008157B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chun-Sheng Liang · 埔鹽鄉, TW
• Hung-Ming Chen · Zhubei City, TW
• Chien-Chao Huang · Baoshan, TW
• Fu-Liang Yang · Baoshan, TW

Key dates

• Filing date: Oct 27, 2006
• Grant date: Aug 30, 2011
• Expiry date: Jan 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.