Hung-Ming Chen
75Patents
10h-index
101Co-inventors
81Inventor score
Filing activity: Apr 11, 1994 → Feb 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8686516B2 | Silicide formation and associated devices | Electricity | 363 | Active |
| US8440517B2 | FinFET and method of fabricating the same | Electricity | 249 | Active |
| US7181697B2 | Method of implementing a plurality of system tray areas | Physics | 54 | Expired |
| US5370311A | Sprinkler | Emerging Cross-Sectional Technologies | 36 | Expired |
| US8519481B2 | Voids in STI regions for forming bulk FinFETs | Electricity | 30 | Active |
| US7104842B1 | Electromagnetic interference diminishing structure of a connector assembly | Electricity | 30 | Expired |
| US9953885B2 | STI shape near fin bottom of Si fin in bulk FinFET | Electricity | 24 | Active |
| US7188315B2 | Method of establishing a customized webpage desktop | Physics | 18 | Expired |
| USD540797S1 | Display device with a cylindrical pedestal | General | 16 | Expired |
| US8466027B2 | Silicide formation and associated devices | Electricity | 13 | Active |
| US8723271B2 | Voids in STI regions for forming bulk FinFETs | Electricity | 10 | Active |
| US5445355A | Antenna-mounting device | Emerging Cross-Sectional Technologies | 10 | Expired |
| US9209300B2 | Fin field effect transistor | Electricity | 10 | Active |
| US6972258B2 | Method for selectively controlling damascene CD bias | Electricity | 9 | Expired |
| US9112052B2 | Voids in STI regions for forming bulk FinFETs | Electricity | 8 | Active |
| US8607182B2 | Method of fast analog layout migration | Physics | 8 | Active |
| USD953605S1 | Pendant lamp | General | 8 | Active |
| US8592918B2 | Forming inter-device STI regions and intra-device STI regions using different dielectric materials | Electricity | 8 | Active |
| US6494385B1 | Controlling device for rotating sprinkler | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8008157B2 | CMOS device with raised source and drain regions | Electricity | 6 | Active |
| USD1006504S1 | Bookshelf | General | 6 | Active |
| USD1000312S1 | Planter | General | 5 | Active |
| US8846466B2 | Forming inter-device STI regions and intra-device STI regions using different dielectric materials | Electricity | 5 | Active |
| US8482073B2 | Integrated circuit including FINFETs and methods for forming the same | Electricity | 5 | Active |
| US8809940B2 | Fin held effect transistor | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.