Method of forming an OHMIC contact on a P-type 4H-SIC substrate
US8008180B2 · kind B2 · utility
20Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | May 4, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.