Semiconductor device and method of fabricating the same
US8008186B2 · kind B2 · utility
0Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Mar 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a wiring formed in predetermined pattern above the semiconductor substrate, a first insulating film lying right under the wiring, and a second insulating film lying in a peripheral portion other than a portion right under the wiring, in which a surface layer of the first insulating film lying in a boundary surface between the first insulating film and the second insulating film is chemically modified to reinforce the surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.