Pattern forming method, semiconductor device manufacturing apparatus and storage medium
US8008211B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2008 |
| Grant date | Aug 30, 2011 |
| Priority date | — |
| Expiry date | Jan 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.