Multi-transistor non-volatile memory element

US8008702B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Shih-Wei Wang · Baoshan, TW
• Chun-Jung Lin · Baoshan, TW

Key dates

• Filing date: Feb 20, 2008
• Grant date: Aug 30, 2011
• Expiry date: Jun 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/685

Abstract

A multi-transistor element including a substrate, a first floating gate disposed on the substrate, a second floating gate disposed on the substrate and coupled to the first floating gate, and a first active region disposed in the substrate and coupled to the first and second floating gates.