Lanthanoid aluminate film fabrication method
US8012315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2007 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Jul 5, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.