Patent · US Active

Deep anisotropic silicon etch method

US8012365B2 · kind B2 · utility

2Cited by

3References

7Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Remi Dussart · Orléans, FR
Philippe Lefaucheux · Orléans, FR
Xavier Mellhaoui · Fontaine, FR
Lawrence J. Overzet · Plano, US
Pierre Ranson · Orléans, FR
Thomas Tillocher · Orléans, FR
Mohamed Boufnichel · Monnaie, FR

Key dates

Filing date	Apr 3, 2008
Grant date	Sep 6, 2011
Priority date	—
Expiry date	Jul 4, 2030

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0112
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from −40° C. to −120° C., comprising alternated and repeated steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.