Light emitting element and manufacturing method thereof
US8012529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Nov 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/874
Abstract
According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.